The gate driver integrated circuit (IC) is a specialized control chip designed to operate reliably under high-temperature conditions in power electronic circuits. Its main purpose is to manage power dissipation, current flow, and heat flow, enabling smooth switching of high-power transistor gates. Moreover, it enables the efficient transfer of large current pulses from the controller to the load, minimizing any losses that may occur during this operation. As a result, gate driver ICs are widely used in various industries such as automotive, electronics, information technology (IT), and telecommunications.
The global gate driver IC market size reached US$ 1.4 Billion in 2022. Looking forward, IMARC Group expects the market to reach US$ 2.0 Billion by 2028, exhibiting a growth rate (CAGR) of 5.8% during 2023-2028.
Gate Driver IC Market Trends and Drivers:
The market is currently witnessing substantial growth attributed to the rising popularity of smart home and smart grid technologies. This surge is fueled by the increasing need for automated switching devices and the global electrification of automobiles. Moreover, the market is being positively impacted by the growing application of gate driver technology in diverse industrial sectors, such as power conversion, lighting and display systems, and HVAC systems. The integration of power transistors in renewable energy systems further presents promising prospects for industry participants. Additionally, the market is driven by the expanding utilization of gate driver ICs in electronic devices, thanks to their improved data transmission capabilities.
Global Gate Driver IC Market 2023-2028 Analysis and Segmentation:
Competitive Landscape:
The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.
Hitachi Power Semiconductor Device Ltd. (Hitachi Ltd.), Infineon Technologies AG, Microchip Technology Inc., Mouser Electronics (TTI Inc., Berkshire Hathaway Inc.), NXP Semiconductors N.V., Onsemi, Renesas Electronics Corporation, Rohm Semiconductor, Semtech Corporation, STMicroelectronics, Texas Instruments Incorporated and Toshiba Corporation.
The report has segmented the market on the basis of region, transistor type, semiconductor material, mode of attachment, isolation technique and application.
Breakup by Transistor Type:
- MOSFET
- IGBT
Breakup by Semiconductor Material:
- Si
- SiC
- GaN
Breakup by Mode of Attachment:
- On-Chip
- Discrete
Breakup by Isolation Technique:
- Magnetic Isolation
- Capacitive Isolation
- Optical Isolation
Breakup by Application:
- Residential
- Industrial
- Commercial
Breakup by Region:
- North America
- United States
- Canada
- Asia-Pacific
- China
- Japan
- India
- South Korea
- Australia
- Indonesia
- Others
- Europe
- Germany
- France
- United Kingdom
- Italy
- Spain
- Russia
- Others
- Latin America
- Brazil
- Mexico
- Others
- Middle East and Africa
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Key highlights of the report:
- Market Performance (2017-2022)
- Market Outlook (2023- 2028)
- Porter’s Five Forces Analysis
- Market Drivers and Success Factors
- SWOT Analysis
- Value Chain
- Comprehensive Mapping of the Competitive Landscape
If you need specific information that is not currently within the scope of the report, we can provide it to you as a part of the customization.
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