A gate driver integrated circuit (IC) is a controlling chip in power electronic circuits that are designed for high temperature environments. It controls power dissipation, current flow, and heat flow and starts smooth switching operations in high-power transistor gates. It also assists in transferring large current pulses from the controller to the load with minimum losses. As a result, gate driver IC is widely utilized in the automotive, electronics, and information technology (IT) and telecommunication sectors across the globe.
The global gate driver IC market size reached US$ 1.4 Billion in 2022. Looking forward, IMARC Group expects the market to reach US$ 2.0 Billion by 2028, exhibiting a growth rate (CAGR) of 5.8% during 2023-2028.
Osmometers Industry Trends and Drivers:
At present, the rising adoption of smart homes and smart grid technologies represent one of the primary factors supporting the growth of the market. Additionally, the increasing demand for automated switching devices, along with the rapid electrification of automobiles around the world, is strengthening the growth of the market. Apart from this, the growing utilization of gate driver industrial applications, such as power conversion, lighting and display systems, and heating, ventilating, and air conditioning (HVAC) systems, is positively influencing the market. Moreover, the rising adoption of power transistors in various renewable energy systems is offering a lucrative growth opportunity to industry players. Furthermore, the increasing employment of gate driver IC in electronic devices as it provides improved data transmission capabilities is contributing to the growth of the market.
Global Gate Driver IC Market 2023-2028 Analysis and Segmentation:
Competitive Landscape:
The competitive landscape of the market has been studied in the report with the detailed profiles of the key players operating in the market.
Hitachi Power Semiconductor Device Ltd. (Hitachi Ltd.), Infineon Technologies AG, Microchip Technology Inc., Mouser Electronics (TTI Inc., Berkshire Hathaway Inc.), NXP Semiconductors N.V., Onsemi, Renesas Electronics Corporation, Rohm Semiconductor, Semtech Corporation, STMicroelectronics, Texas Instruments Incorporated and Toshiba Corporation.
The report has segmented the market on the basis of region, transistor type, semiconductor material, mode of attachment, isolation technique and application.
Breakup by Transistor Type:
- MOSFET
- IGBT
Breakup by Semiconductor Material:
- Si
- SiC
- GaN
Breakup by Mode of Attachment:
- On-Chip
- Discrete
Breakup by Isolation Technique:
- Magnetic Isolation
- Capacitive Isolation
- Optical Isolation
Breakup by Application:
- Residential
- Industrial
- Commercial
Breakup by Region:
- North America
- United States
- Canada
- Asia-Pacific
- China
- Japan
- India
- South Korea
- Australia
- Indonesia
- Others
- Europe
- Germany
- France
- United Kingdom
- Italy
- Spain
- Russia
- Others
- Latin America
- Brazil
- Mexico
- Others
- Middle East and Africa
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Key highlights of the report:
- Market Performance (2017-2022)
- Market Outlook (2023- 2028)
- Porter’s Five Forces Analysis
- Market Drivers and Success Factors
- SWOT Analysis
- Value Chain
- Comprehensive Mapping of the Competitive Landscape
If you need specific information that is not currently within the scope of the report, we can provide it to you as a part of the customization.
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